Real-time monitoring of atomic force microscope probes

The use of atomic force microscopes to manipulate atoms on surfaces (particularly on silicon surfaces—see for example this post and this post) is one promising alternative path for advancing nanotechnology toward productive nanosystems and molecular manufacturing. As was apparent in a recent interview of Professor Philip Moriarty of the University of Nottingham, many of the major technical obstacles encountered with atomic force microscopes involve the quality and reproducibility of the tips. Physorg.com points to a National Institute of Standards and Technology (NIST) news release of a way to improve AFM tips. “Getting the Point: Real-Time Monitoring of Atomic-Microscope Probes Adjusts for Wear“

Scientists at the National Institute of Standards and Technology (NIST) have developed a way to measure the wear and degradation of the microscopic probes used to study nanoscale structures in situ and as it’s happening. Their technique can both dramatically speed up and improve the accuracy of the most precise and delicate nanoscale measurements done with atomic force microscopy (AFM).

If you’re trying to measure the contours of a surface with a ruler that’s crumbling away as you work, then you at least need to know how fast and to what extent it is being worn away during the measurement.

This has been the challenge for researchers and manufacturers trying to create images of the surfaces of nanomaterials and nanostructures. Taking a photo is impossible at such small scales, so researchers use atomic force microscopes. Think of a device like a phonograph needle being used, on a nanoscale, to measure the peaks and valleys as it’s dragged back and forth across a surface. These devices are used extensively in nanoscale imaging to measure the contours of nanostructures, but the AFM tips are so small that they tend to wear down as they traverse the surface being measured.

Today, most researchers stop the measurement to “take a picture” of the tip with an electron microscope, a time-consuming method prone to inaccuracies.

NIST materials engineer Jason Killgore has developed a method for measuring in real time the extent to which AFM tips wear down. Killgore measures the resonant frequency of the AFM sensor tip, a natural vibration rate like that of a tuning fork, while the instrument is in use. Because changes to the size and shape of the tip affect its resonant frequency, he is able to measure the size of the AFM’s tip as it works—in increments of a tenth of a nanometer, essentially atomic scale resolution. …

The potential impact of this development is considerable. Thousands of AFMs are in use at universities, manufacturing plants and research and development facilities around the world. Improving their ability to measure and image nanosized devices will improve the quality and effectiveness of those devices. Another benefit is that developing new measurement tips—and studying the properties of new materials used in those tips—will be much easier and faster, given the immediate feedback about wear rates.

We can also hope that this method will facilitate the manipulation of atoms for mechanosynthesis being done by pioneers like Zyvex Labs, Prof. Moriarty, and the team that won the 2009 Feynman Prize for Experimental work.

Unprecedented look at oxide interfaces reveals unexpected structures on atomic scale

August 4, 2010

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A new scanning tunneling microscopy and low energy electron diffraction technique developed at Oak Ridge National Laboratory captured this 50 nm x 50 nm image of an oxide surface. Each bright dot is a single atom of material.

Thin layers of oxide materials and their interfaces have been observed in atomic resolution during growth for the first time by researchers at the Center for Nanophase Materials Sciences at the Department of Energy's Oak Ridge National Laboratory, providing new insight into the complicated link between their structure and properties.

"Imagine you suddenly had the ability to see in color, or in 3-D," said the CNMS's Sergei Kalinin. "That is how close we have been able to look at these very small interfaces."

The paper was published online in ACS Nano with ORNL's Junsoo Shin as lead author.

A component of magnetoelectronics and spintronics, oxide interfaces have the potential to replace silicon-based microelectronic devices and improve the power and memory retention of other electronic technologies.

However, oxide interfaces are difficult to analyze at the atomic scale because once the oxides are removed from their growth chamber they become contaminated. To circumvent this problem, ORNL researchers led by Art Baddorf built a unique system that allows scanning tunneling microscopy and low energy electron diffraction to capture images of the top layer of the oxide while in situ, or still in the vacuum chamber where the materials were grown by powerful laser pulses.

Many studies of similar oxide interfaces utilize a look from the side, typically achieved by aberration corrected scanning transmission electron microscopy (STEM). The ORNL team has used these cross-sectional images to map the oxide organization.

However, like a sandwich, oxide interfaces may be more than what they appear from the side. In order to observe the interactive layer of the top and bottom oxide, the group has used scanning tunneling microscopy to get an atomically resolved view of the surface of the oxide, and observed its evolution during the growth of a second oxide film on top.

"Instead of seeing a perfectly flat, square lattice that scientists thought these interfaces were before, we found a different and very complicated atomic ordering," said Baddorf. "We really need to reassess what we know about these materials."

Oxides can be used in different combinations to produce unique results. For instance, isolated, two oxides may be insulators but together the interface may become conductive. By viewing the atomic structure of one oxide, scientists can more effectively couple oxides to perform optimally in advanced technological applications such as transistors.

Kalinin says the correct application of these interface-based materials may open new pathways for development of computer processors and energy storage and conversion devices, as well as understanding basic physics controlling these materials.

"In the last 10 years, there has been only limited progress in developing beyond-silicon information technologies," Kalinin said. "Silicon has limitations that have been reached, and this has motivated people to explore other options."

Atomic resolution of interface structures during oxide growth will better enable scientists to identify defects of certain popular oxide combinations and could help narrow selections of oxides to spur new or more efficient commercial applications.

Provided by Oak Ridge National Laboratory (news : web)

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